Wafer Probing Product Feature Comparsion Matrix

	PCB Mounted Ceramic	Single Site Ceramic	AttoFast^TM Single Site Ceramic	Small Multi-Site 72mm Ceramic	200mm Multi-Site (full wafer)	300mm Multi-Site (full wafer)	VersaTile^TM TVLC	VersaTile^TM TVLL	VersaTile^TM TVHT

Operating Temperature Range
5°C to 85°C	X	X	X	X	X	X	X	X	X
5°C to 200°C	X	X	X	X	X	X		X	X
-65°C to 300°C		X	X	X	X	X		X	X
5°C to 300°C		X	X	X	X		X	X
Expansion Matched		X	X	X	X	X		X	X
Electrical Characteristics
Ultra low leakage (<1 Fempto Amps/Volt) and fast settling time (<1 second)		X	X	X	X	X		X	X
Low leakage (<5 Fempto Amps/Volt) and medium settling time (<5 seconds)	X	X	X	X	X	X	X	X	X
High Current, High Voltage Option	X	X	X	X	X	X		X	X
Probe Station Mount
Fits Std. RF Positioner with Planarization							X	X	X
Fits Std. 4.5 Inch Probe Card Holder	X	X	X	X			X	X	X
Uses Celadon Modular Adapter^TM to mount probe card	X	X	X	X	X	X	X	X	X
Fits Std. 4.5 Inch Probe Card Holder with Single Site VersaPlate^TM							X	X	X
Unique Features
Single-site	X	X	X	X	X	X	X	X	X
Multi-site	X			X	X	X
Rigid Ceramic Construction	X	X	X	X	X	X	X	X	X
Rigid Metal Chassis	X	X	X	X	X	X	X	X
Low Cost of Ownership	X	X	X	X	X	X	X	X	X
Supports Ultra Fast Probing on Low Current Devices			X
Crash Resistant Probes in Recessed Ceramic Cavity Available	X	X	X	X	X	X	X	X	X
Autoprober Light Tight Shielded Environmental Enclosure		X	X	X	X	X		X	X
Applications
Production and Functional Test	X					X	X	X
Multi-Site Production or Parallel Test	X
Process Development and Device Characterization		X	X	X	X	X		X	X
High Accuracy Process Development and Device Characterization		X	X						X
Transistor hot carrier injection (HCI)		X	X	X	X	X		X	X
Eletromigration (EM)				X	X	X		X	X
Transistor negative bias temperature instability (NBTI)		X	X	X	X	X		X	X
Time dependent dielectric breakdown (TDDB)		X	X	X	X	X		X	X
Wafer level burn-in				X	X	X		X	X
Wafer level life test				X	X	X		X	X